Papers & Patents:

2014
Refereed articles:

  1. M. Kambara, A. Kitayama, K. Homma, T. Hideshima, K. Kaga, K-Y. Sheem, S. Ishida, T. Yoshida, “Nano-composite Si particle formation by plasma spraying for negative electrode of Li ion batteries”, J. Appl. Phys. 115 (2014) 143302.
  2. K. Homma,M. Kambara,T. Yoshida, “High throughput production of nanocomposite SiOx powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries”, Sci. Technol. Adv. Mater.,15, 025006 (2014).
  3. S. Wu, K. Sawada, T. Ichimaru, T. Yamamoto, M. Kambara, T. Yoshida, “High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition”, Sci. Technol. Adv. Mater.,15, 035001 (2014).
  4. M. Kaga, T. Hideshima,M. Kambara,“Plasma sprayed Si nano composite powders for negative electrode of lithium ion batteries”, JPS Conf. Proc, 1 (2014) 015073.
  5. N. Gerile,M. Kambara,“Synthesis and characterization of the plasma sprayed Si-Ni composite powders as negative electrode of lithium-ion batteries”, JPS Conf. Proc., 1 (2014) 015057.
  6. S. Wu, T. Iguchi, M. Kambara, T. Yoshida, "IMproved production yield in silicon epitaxy by reducing prfessure in mesoplasma chemical vapor deposition", Appl. Phys. Express 7 (2014) 086201.
  7. M. Kambara, et al., Development of Nanocomposite Si anode by plasma spray PVD for next generation Li ion batteries, Earozoru Kenkyu. 29 (2014) 93 (Japanese)

2013
Refereed articles:

  1. L.W. Chen, Y. Shibuta, M. Kambara,T. Yoshida, “Molecular dynamics simulation of the role of hydrogenated Si clusters for fast rate mesoplasma epitaxy”, J. Phys. D: Appl. Phys. 46 (2013) 425302-1.
  2. K. Iizuka,M. Kambara,T. Yoshida,“Highly sensitive formaldehyde sensors based on catalyst added porous films fabricated by plasma spray physical vapor deposition”, Sens. Actu. B 182, 250-255, (2013).
  3. S. Wu,M. Kambara,T. Yoshida,“Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition”, Plasma Chem. Plasma Process, 33, 433-451, (2013).
  4. L.W. Chen, Y. Shibuta, M. Kambara,T. Yoshida, “Nanocluster dynamics in fast rate epitaxy under mesoplasma condition”, Chem. Phys. Lett., 564, 47-53, (2013).
  5. S. Wu, H. Inoue, M. Kambara, T. Yoshida,“Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy”, Jpn. J. Appl. Phys.,52, 071301-1-5, (2013).

2012
Refereed articles:

  1. K. Iizuka,M. Kambara,T. Yoshida, “Highly sensitive SnO2 porous film gas sensors fabricated by plasma spray physical vapor deposition”, Sensor Actuat. B 173 (2012) 455.
  2. L.W. Chen, Y. Shibuta,M. Kambara,T. Yoshida, “Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy”, J. Appl. Phys.111, 123301-1-6, (2012).

2011
Refereed articles:

  1. J. Fukuda,M. Kambara, and T. Yoshida, “Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor deposition”，Thin Solid Films, 519, 6759 – 6762, (2011).
  2. K. Iizuka,M. Kambara,T. Yoshida, “Growth of tin oxide thick films by plasma spray physical vapor deposition”, Sens. Actu., B 155, 551-556, (2011).

2010
Refereed articles:

  1. M. Kambara, A. Shinozawa, K. Aoshika, K. Eguchi, T. Yoshida, “Development of porous YSZ coatings with modified thermal and optical properties by plasma spray physical vapor deposition”, J. Solid Mech. Mater. Eng. 4, 94-106, (2010).
  2. A. Shinozawa, K. Eguchi,M. Kambara, T. Yoshida, “Feather-like structured YSZ coatings at fast rates by plasma spray physical vapor deposition”, J. Thermal Spray Technol. 19,190-197, (2010).

2009
Refereed articles:

  1. J.M.A. Diaz,M. Kambara, and T. Yoshida,“Evolution of surface morphology with hydrogen dilution during silicon epitaxy by mesoplasma CVD”, IEEE Trans. Plasma Sci., 37 (2009) 1723-1729.
  2. J.M.A. Diaz,M. Kambara, and T. Yoshida,“Instantaneous cleaning of silicon substrates by mesoplasma for high rate and low temperature epitaxy”, Thin Solid Films, 518, 976-980, (2009).
  3. K. Kojima, K. Nose,M. Kambara, T. Yoshida,“Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubic boron nitride thin films”, J. Phys. D Appl. Phys., 42, 055304-5, (2009).

2008
Refereed articles:

  1. J.M.A. Diaz,M. Kambara,and T. Yoshida, “Detection of Si nanoclusters by x-ray scattering during silicon film deposition by mesoplasma chemical vapor deposition”, J. Appl. Phys. 104 (2008) 013536.

2007
Refereed articles:

  1. Li JQ, et. al., Twin-structured yttria-stabilized t'zirconia coatings deposited by plasma spray physical vapor deposition: Microstructure and mechanical properties, J. Am. Ceram. Soc., 90(2), (2007) 603.
  2. Yang HS, Iwamoto C, Yoshida T, Direct nucleation of cubic boron nitride on silicon substrate, Dia. Related Mater. 16(3), (2007) 642.
  3. Diaz J.M.A., Sawayanagi M, Kambara M, Yoshida T, Electrical properties of thick epitaxial silicon films deposited at high rates and low temperatures by mesoplasma chemical vapor deposition, Jpn. J. Appl. Phys. 46(8A), (2007) 5315.
  4. H. Oba , K. Nose and T. Yoshida, Effects of Si impurity on the nucleation and growth of cubic boron nitride thin films, Surf. Coat. Technol.201 (2007) 5502.
  5. M. Sawayanagi, J.M.A. Diaz, M. Kambara and T. Yoshida, Fabrication of heteroepitaxial Si films on sapphire substrates using mesoplasma CVD, Surf. Coat. Technol.201 (2007) 5592.
  6. M. Kambara,Y. Hamai, H. Yagi, T. Yoshida, Nano cluster assisted high rate epitaxy of silicon by mesoplasma CVD, Surf. Coat. Technol.201 (2007) 5529.

2006
Refereed articles:

  1. T. Yoshida, Toward a new era of plasma spray processing, Pure App. Chem., 78(6), pp.1093-1107 (2006).
  2. M. Kambara, H. Yagi, M.Sawayanagi and T. Yoshida, High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition, J. Appl. Phys. 99(2006) 074901.
  3. K. Shinoda, K. Koseki, and T. Yoshida, Influence of impact parameters of zirconia droplets on splat formation and morphology in plasma spraying, J. Appl. Phys. 100 (7) 074903 2006
  4. H. Huang, K. Eguchi, and T. Yoshida, High-Power Hybrid Plasma Spraying of Large Yttria-Stabilized Zirconia Powder, J. Therm. Spray. Techn., 15(1), 2006, p. 72-82.
  5. H. Huang, K. Eguchi, M. Kambara, and T. Yoshida, Ultrafast Thermal Plasma Physical Vapor Deposition of Yttria-Stabilized Zirconia for Novel Thermal Barrier Coatings, J. Therm. Spray. Techn., 15(1), p. 83-91. (2006)
  6. T. Yoshida and M. Kambara, Super high rate deposition of homo- and hetero-epitaxial Si thick films by mesoplasma CVD, High Temperature Material Process, 11 (2006) 103 .
  7. Nose K, Oba H, Yoshida T, Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc, Appl. Phys. Lett. 89, 112124 (2006).

Proceedings:

  1. H.J. Huang, J.Q. Li, T. Ma, K. Eguchi, T. Yoshida, Development of Composite Nano-Coatings by Comprehensive Thermal Plasma Deposition, Proc. Of ITSC 2006, May 15-17, 2006, Seattle Washington USA.

Conferences(#:Invited talk):

  1. H.J. Huang, J.Q. Li, T. Ma, K. Eguchi, T. Yoshida, Development of Composite Nano-Coatings by Comprehensive Thermal Plasma Deposition, International Thermal Spray Conference and Exposition 2006, May 15-17, 2006, Seattle Washington USA.
  2. 野瀬健二、吉田豊信、時間依存バイアス法によるcBN核生成制御、応物学会/春季、22p-zp-13 東京(2006年3月)
  3. 野瀬健二、十倉祐紀、中村圭輔、吉田豊信、ICP-CVD法によるcBN核生成・成長に及ぼす動的ガス組成費の影響、応物学会/秋季29p-X-9 滋賀（2006年8月）
  4. M. Kambara, Mesoplasmas for high rate and low temperature epitaxy, UT Workshop, (Tinsghua University, China, May 2006)
  5. M. Kambara, M. Sawayanagi, J.M.A. Diaz and T. Yoshida, Feasibility of mesoplasma CVD for high rate and low temperature synthesis of heteroepitaxial Si thick films, 8th Asia-Pacific conference on Plasma Science and Technology and 19th? Symposium on Plasma Science for Materials, Cairns, Australia, (July 2006)
  6. J.M.A. Diaz, M. Sawayanagi, M. Kambara and T. Yoshida, Feasibility of mesoplasma CVD for high rate and low temperature synthesis of heteroepitaxial Si thick films, 8th Asia-Pacific conference on Plasma Science and Technology and 19th? Symposium on Plasma Science for Materials, Cairns, Australia, (July 2006)
  7. M. Kambara, M. Sawayanagi, J.M.A. Diaz, E. Abe and T. Yoshida, Low temperature and high rate heteroepitaxy of si on sapphire by mesoplasma CVD, Girmisch-Partenkirchen, Germany, (Sept 2006)
  8. #?? 神原淳, 次世代プラズマコーティング技術・薄膜化技術,第44回CVD研究会 (2006年11月)
  9. #?? T. Yoshida, Iketani-Conference, Tokyo (Oct. 2006)
  10. # T. Yoshida and M. Kambara, Super high rate deposition of homo- and hetero-epitaxial Si thick films by mesoplasma CVD, HTTP9 Conference, St. Petersburg, Russia, (May 2006)
  11. J. M. A. Diaz, M. Sawayanagi, M. Kambara, T. Yoshida, Electrical properties of epitaxial silicon films deposited at high rates and low temperatures under meso plasma conditions, JSAP Spring Conference, 22a-p-11, March 2006, Tokyo.
  12. 12.# T. Yoshida, Reconstruction at the department of materials engineering, the University of Tokyo, (China, June 2006)
    Awards:
    • ナノコーティングプロジェクト、有望技術賞”, ナノテク2006, ビックサイト、東京（2006年3月）
    • H.J. Huang, Development of composite nano-coatings by comprehensive thermal plasma deposition, Best Paper Award at the 2006 International Thermal Spray Conference, May 15-17, 2006, Seattle Washington USA

     

 

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