DATE of BIRTH:
April 11, 1948
EDUCATION:
1972: Department of
Metallurgy, Faculty of Engineering, The University of Tokyo: (BE)
1974: Department of Metallurgy & Materials Engineering, Graduate
School of Engineering, The University of Tokyo: (MA)
1977: Department of Metallurgy & Materials Engineering, Graduate
School of Engineering, The University of Tokyo
FULL TIME EMPLOYMENT:
1977: Research Associate,
Faculty of Engineering, The University of Tokyo
1982: Assistant Professor, Faculty of Engineering, The University
of Tokyo
1984: Associate Professor, Faculty of Engineering, The University
of Tokyo
1989: Full Professor, Faculty of Engineering, The University of
Tokyo
EDITORIAL BOARD:
J. Plasma Chem. and
Plasma Processing
Plasma Sources: Science and Technology
J. Mater. Synthesis and Processing
J. Thermal Spray Technology
Science and Technology of Advanced Materials
CHAIRMAN:
1990 - 1996: JSPS-153
Committee on Plasma Materials Science
1997 - 1998: IUPAC Subcommittee on Plasma Chemistry
OTHERS:
General Secretary
of ISPC-8 (Tokyo, 1987)
Member of IUPAC Subcommittee on Plasma Chemistry (1988 - 1998)
IUPAC Fellow (1999 -)
AWARDS:
1987: Paper Award
(Japan Inst. of Metals).
1989: Achievement Award (Japan Inst. of Metals).
1992: Nishiyama Memorial Award (Iron and Steel Institute of Japan)
1994: Environment Award (The Nikkan Kogyo Shinbun, Ltd. & Environment
Agency).
1996: Notable Invention Award: (Science and Technology Agency).
1996: Academic Award (The Ceramic Society of Japan).
2000: IUPAC Fellow.
2003: Masumoto Hakaru Award (Japan Inst. of Metals).
2004: Plasma Materials Science Award (JSPS-153 Committee)
PAPERS/PATENTS:
Papers:
Total citation ( - 1400)
Regular Issure: in English ( - 120), in Japanese ( - 30), Books
(joint authors) (10)
Patents: - 25 (Japan),
- 5 (International)
Full List is Here
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RESEARCH FIELDS:
Thermal Plasma Processing
# Plasma Flash Evaporation (TPPVD)
# Thermal Plasma Chemical Vapor Deposition (TPCVD)
# Spraying/ Ultrafine Powder Synthesisi (Metal Alloys, Ceramics)
# Coatings (SiC, Si3N4,
Diamond, High Tc Superconductor, SOFC, TBC)
Low Pressure Plasma
Processing
# Low pressure ICP & Phase regulated bias sputtering (cBN, Diamond)
NOTABLE INVENTION:
Thermal Plasma Processing
1. DC-RF Hybrid Plasma System & RF-RF Hybrid Plasma System
2. Atmospheric Microwave Plasma Torch for Diamond Deposition
3. Preparation of Ultrafine Powders of Ceramics such as SiC, Si3N4,
SiC-Si3N4 by DC-RF
Hybrid Plasma System
4. Ultrafast Deposition of Ceramics such as SiC and Si3N4
by Thermal Plasma CVD
5. Cyclic Thermal Plasma Deposition System for Diamond and SiC.
6. Development of Flash Evaporation Method for High Tc Superconductor
and SiC
7. Development of DC-RF Hybrid Plasma Spraying System for Ceramics
& for SOFC and TBC
8. Ultrafast Deposition of Si Films for Solar Cells by Thermal Plasma
CVD
9. Development of High Power Induction Plasma Torch for the Destruction
of CFC and Other Gases
10. Development of High Power Induction Plasma Torch for the Radioactive
Waste Destruction
11. Development of High Power Twin Hybrid Spray System for Novel
TBC
Low Pressure Plasma
Processing
1. Pure cBN Deposition by Phase Regulated Bias Sputtering
2. Pure cBN Deposition by Low Pressure ICP-CVD
3. Lower Pressure Deposition of Diamond by Low Pressure ICP-CVD
COMMENTS:
For the
last 30 years, I have been engaged in studying plasma processing
based on materials science, namely, plasma materials engineering.
I started with the study of thermal plasma processing, especially
plasma-particle interaction and co-condensation process of high
temperature vapors, and then expanded to the ultrafine particle
synthesis and to thermal plasma PVD, CVD and powder spraying for
coating applications. 10 years ago, I also started to utilize medium
pressure plasma with an aim at super-high rate deposition of pure
silicon, and found that the peculiar characteristic of this plasma
is suitably called gMeso-plasmah as a new category of plasmas. Looking
back my research carrier, the research field would be characterized
mainly by the words: plasma and vapor condensation, and is fortunately
fit to the recent global trend of materials R&D which is shifting
from gmonolithich to gmaterials
systemh and from gbulkh to gthin film & coatingh, although this
was not the case 30 years ago.
It is, on the other hand, a clear consensus that the primary factor
in materials development is gaffordabilityh and it must be considered
at every step in processing; unless otherwise, all the efforts are
only for the sake of research. It is thus a natural consequence
that the plasma processing, as an affordable and effective thin
film & coating technology, is attracting global attentions in
materials engineering. Unfortunately, however, the current plasma
spray thin film & coating technology seems not yet to reach
the sufficient level to meet the requirements from the fields where
this technique was not applicable in the past. In fact, considering
the present
status of all the thin film & coating related markets on the
basis of this technology developed over the last thirty years and
its future possible evolution, the rapidly growing desires, such
as the next-generation thin film devices and nano-coatings, would
not be fully gratified if the currently available technologies are
only used. I suppose that I am not the only one who believes that
new standpoints and principles with the fundamental research concept
should be introduced from both plasma processing science and materials
science & engineering perspectives.
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